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  ESDA6V8UM 2-line, ultra-low capacitance, uni-directional transient voltage suppressors descriptions the ESDA6V8UM is a transient voltage suppressors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). it is designed to replace multilayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. the ESDA6V8UM was past esd transient voltage up to 8kv (contact) according to iec61000-4-2 and withstand peak current up to 2.8a for 8/20us pulse according to iec61000-4-5. the ESDA6V8UM is available in a sot-563 package. standard products are pb-free and halogen-free. features  working voltage : 5v  peak power (tp=8/20us) : 36w  esd protection (iec61000-4-2) : 8kv (contact)  low leakage current  small package applications  mobile phone  pad  notebook  stb  lcd tv  digital camera  other electronics equipments sot-563 pin configuration (top view) um = device code * = month (a~z) marking order information device package shipping ESDA6V8UM-6/tr sot-563 3000/tape&reel 2 5 3 4 6 1 i/o1 gnd i/o2 i/o1 i/o2 vp 2 5 3 4 6 1 i/o1 gnd i/o2 i/o1 i/o2 v p um* 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electronics characteristics (ta=25 o c, unless otherwise noted) 8/20us waveform iec61000-4-2 waveform parameter symbol rating unit peak pulse power (tp=8/20us) ppk 36 w peak pulse current (tp=8/20us) ipp 2.8 a esd voltage iec61000-4-2 (contact) v esd 8 kv esd voltage iec61000-4-2 (air) v esd 15 kv operation junction temperature t j 150 o c lead temperature t l 260 o c storage temperature tsg -55~150 o c parameter symbol condition min. typ. max. unit reveres maximum working voltage v rwm 5 v reveres leakage current i r v rwm =5v 1 ua reveres breakdown voltage v br i t =1ma 6.5 v forward voltage v f i f =10ma -0.4 -1.4 v ipp=1a tp=8/20us 10 v clamping voltage v c ipp=2.8a tp=8/20us 13 v junction capacitance c j i/o to gnd vr=0v, f=1mhz 0.7 1.0 pf junction capacitance c j i/o to i/o vr=0v, f=1mhz 0.35 0.5 pf 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us) t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) ESDA6V8UM 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
t ypical characteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time esd clamping (iec61000-4-2 +8kv contact) capacitance vs. reveres voltage power derating vs. temperature esd clamping (iec61000-4-2 -8kv contact) 01234 0 2 4 6 8 10 12 14 16 18 20 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 f=1mhz c - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 0 255075100125150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) ESDA6V8UM 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-563 dimensions in millimeter symbol min. typ. max. a 0.525 0.563 0.600 a1 0.000 0.025 0.050 e 0.450 0.500 0.550 c 0.090 0.125 0.160 d 1.500 1.600 1.700 b 0.170 0.220 0.270 e1 1.100 1.200 1.300 e 1.500 1.600 1.700 l 0.100 0.200 0.300 7 e ref ESDA6V8UM 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification


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